2D-PL @ SEMICON Europa

This 200 mm Graphene/Ge/Si wafer showcases the 2D-PL’s pioneering approach to scalable, high-quality graphene integration on semiconductor platforms. By combining epitaxial germanium-on-silicon rigid substrates with uniform monolayer graphene, we enable seamless compatibility with existing CMOS processes. This innovation might deliver several advantages compared to conventional metallic substrates, paving the way for next-generation electronics, photonics and sensor technologies.

High-performance 2D materials (2DM), such as transition metal dichalcogenides (TMDs) monolayers, are synthesised on 300 mm wafers using AIXTRON’s Close-Coupled Showerhead (CCS) deposition technology. Thanks to its dynamic platform and flexible process windows, this tool achieves reproducible growth of high quality and uniform 2DM (i.e., MoS₂ or WSe₂ monolayers) through Metal-Organic Chemical Vapour Deposition (MOCVD). Production can be adapted to various MO and hydride sources, while being scalable from R&D level to mass manufacturing. The CCS platform can be equipped with diverse in-situ monitoring tools, high surface temperatures (T>1300˚C) kits, AIXTRON’s thermal mapping device and/or gas concentration sensors (fine precursor gad monitoring).

AIXTRON’s Close-Coupled Showerhead (CCS) deposition system enables 2D materials growth on both 200 mm and 300 mm wafers. Here two wafers are exposed as examples of 3-atom-thick MoS₂ layer growth through MOCVD on two different substrates: sapphire on the 200 mm wafer, silicon on the 300 mm. Molybdenum disulfide is one of the most studied materials from the family of transition metal dichalcogenides (TMDs) monolayers because of its exceptional electronic and structural features, among which the tunable bandgap, the sub-nanometer thickness, the lack of dangling bonds and the strong covalent intralayer bond.

This wafer features graphene-based electronic test structures, including TLM patterns, Hall bars and four-point probe devices, distributed across the entire wafer. These enable precise evaluation of contact resistance, carrier mobility and sheet resistance, while providing wafer-scale insights into uniformity and reliability. The feedback from these measurements drives continuous process improvements and performance optimisation, accelerating the integration of two-dimensional materials (2DMs) into advanced semiconductor technologies. By using two-dimensional materials (2DMs), such as graphene, we can overcome the limitations of conventional semiconductors, providing next-generation electronics with superior electrical performance, scalability and energy efficiency.

Atomfab is a state-of-the-art PEALD (Plasma-Enhanced Atomic Layer Deposition) system designed for high-quality dielectric deposition on 2D materials with minimal damage. This production-grade tool enables ultra-thin protective layers to be deposited in situ, protecting sensitive 2D materials prior to the final dielectric layer. The process is rapid, reproducible and fully integrated within a production environment, ensuring consistent material quality. Atomfab plays a critical role in the 2D-PL workflow, supporting scalable fabrication and enabling advanced device development.

This 300 mm integrated wafer with 2D-material (WS₂) uses a CMOS compatible integration flow fully fabricated on industry compatible tools fabricated in imec’s cleanroom facility. Integration modules consist of a pre-patterned wafer, 2D-material deposition (via direct growth or layer transfer process), gate and contact module.