Graphene can do more than transport spins — it can process them

Our new paper reports giant spin signals and a spin-diode effect in folded-bilayer graphene at room temperature, reaching spin accumulations >20 meV and millivolt-level signals. By tailoring the graphene channel geometry, we achieve near-ideal impedance matching and unlock nonlinear spin–charge interactions.

These results demonstrate that 2D materials can go beyond passive spin transport and enable active spintronic functionalities, which are essential for future spin-based memory, logic, and neuromorphic computing architectures.

This work was achieved through tight collaboration between academic groups from 2DSPIN-TECH, Chalmers University of Technology, BME Budapest, and the University of Manchester, bridging materials science, device physics, and modelling.

The paper is published in:

📄 npj 2D Materials and Applications 10, 43 (2026)
🔗 https://doi.org/10.1038/s41699-026-00679-0