2D-PL multi-project wafer run 1

Graphenea uses semiconductor manufacturing techniques to produce graphene-based devices at the wafer scale, such as resistors, capacitors, diodes, Hall sensor elements and field effect transistors. The foundry has three distinctive process flows that allow to fabricate these discrete components and even combine some of these devices within a single die, enabling the fabrication of simple circuitry.

Graphenea’s proprietary fabrication processes enable them to guarantee metrics in their runs, ensuring the customer’s devices are up to standards. Moreover, short manufacturing cycles use far less resources compared to those of traditional silicon, reducing the amount of water, gases and other chemicals and materials, significantly reducing their carbon footprint.

KEY BENEFITS

Versatile process flows to produce different devices
Guaranteed performance
Low cost

KEY FEATURES

2, 3 and 4 terminal devices can be manufactured
Mobilities typically in excess of >1000 cm²/V·s
Features down to ≈10µm for graphene and metal layers
Device libraries including resistors, capacitors and field effect transistors

SCHEDULE

Open: 1 April 2025
Closing: 1 September 2025
Execution: Oct-Dec 2025

PRICING

1800€ for 4cm²
900€ per additional cm²

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This MPW run is tailored for liquid sample measurements, offering features particularly suited for biosensing and liquid biopsies. The passivated contacts prevent large leakage currents and device degradation upon contact with the liquid analyte, enabling measurements in saline solutions, as well as biological fluids like blood, plasma, saliva, and sweat.

Transistors	CVD-graphene gated through substrate	Ambipolar FET p-type at V_G=0	Width=10µm Length=10µm
Resistors	CVD-graphene	p-type, 1kOhm/sq	Width=10µm Length= 10µm
Substrate	SiO₂/Si		SiO₂=90nm Si=525µm
Metal contacts	Au		CD=10µm Thickness = 50nm
Encapsulation	Al₂O₃		CD=10µm Thickness = 30nm
Via opening			CD=10µm
QC	Carrier transport	In PCM dies	Mobility >1000cm2/V·s Dirac Point<20V Hysteresis<10V
	Raman	In PCM dies	Raman · I(G)/I(2D) < 1.25 · I(D)/I(G) < 0.15 · Pos(G) < 1600 cm^-1 · FWHM(2D) < 45 cm^-1
	Optical	In PCM dies	Channel integrity > 95% Device yield within die > 75%

About Graphenea Semiconductors

Graphenea, a technology company founded in 2010, is a world leading graphene producer. The 25 employees in Graphenea work on contributing to the successful development of graphene applications of our customers, in a wide range of sectors and in more than 60 countries in the world. Through research and innovation, we support our customers with our portfolio consisting of: CVD Graphene films, Graphene Field-Effect-Transistors chips (GFETs), Graphene Foundry Services (GFAB) and Graphene Oxides. Graphenea’s facilities are located in Spain (San Sebastián) and USA (Boston).

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