The offered baseline process for the second MPW run is a GFET including a top/bottom contact with an optional local or global back gate, an optional encapsulation and an optional graphene-area opening. The design of the device can be adjusted within the specifications listed below.
Specifications
Substrate
- Silicon/SiO2
- Basic die size : 1 x 1 cm2 (a different size can be consulted upon individual request)
Resolution
- General design rule: 5 µm for in-layer critical dimension and over-layer alignment
Baseline Process
- Gate module
- Contact module
- Graphene module
- Encapsulation module
Characterisation
- Raman characterisation
- Electrical measurements
Application
- Bio/ Gas/ Chemical sensors, Hall Sensors, Photodetectors