The offered baseline process for the first MPW run is a GFET including a top/bottom contact with an optional local or global back gate, an optional encapsulation and an optional graphene-area opening. The design of the device can be adjusted within the specifications listed below.
Specifications
Substrate
- Material: Silicon, Glass
- Basic die size: 1 x 1 cm² (a different size can be consulted upon individual request)
Resolution
- General design rule: 5µm for in-layer critical dimension and over-layer alignment
Baseline Process
- Top/Bottom metal contact
- Wafer scale graphene transfer
- Basic module provided in PDK: Hall cross, TLM devices, 4-point measurement bar
- Optional: encapsulation, and via opening on top of metal pads
- Optional: graphene sensing area opening
- Optional: metal local or global back gate
Characterization
- Optional: Raman characterization
- Optional: Electrical measurement for as-fabricated devices
Application
- Bio/ Gas/ Chemical sensors, Hall Sensors, Photodetectors