Full process details
Backgate metal: Ti/Au 5/15
Backgate dielectric: HfOx 20nm
Graphene: CVD grown >97% monolayer
Metal S/D contact: Au 50nm
Passivation dielectric: AlOx 50nm
2D-EPL multi-project wafer run 6
The 2D-EPL project is launching its sixth multi-project wafer (MPW) run where universities, research institutes and companies can include their designs as dies on joint wafers. This run, provided by Graphenea Semiconductors, provides a flexible platform into which we can implement three different types of devices within one process flow. Applications can range from general electronics and sensing to optoelectronics.
Why apply?
- Versatile process flow
- 2 terminal devices, with or without encapsulation.
- 3 terminal backgated devices with or without encapsulation:
- Suitable for QD sensitisation
- Hybrid biosensors with liquid gating and back gating
- 4 terminal devices:
- Gas sensors with local heaters
- HfOx dielectrics: large capacitive coupling for low voltage operation
- Short turnaround times: <3 months from tape out
- Direct communication channels. Feasibility studies, consulting.
Important Dates
- April 2024: Call open, see specifications below
- 30 June 2024: Call closes, PDK available
- 15 July 2024: Design freeze, mask tape out
- 1 September 2024: MPW run delivery target
Price
-
3900€ for 4 cm2 (4x 1x1cm2 dies or 16x 5x5mm2 dies)
This run is now closed
Graphenea Foundry Design Rules
Comprehensive set of Design Rules for device design on .gds format files
Examples Device A
Images left to right: a) 4 terminal devices with local heaters and passivated electrodes (5x magnification); b) 3 terminal devices with local gates and passivated electrodes (5x magnification); c) 3 terminal devices with local heaters and passivated electrodes (20x magnification).
About Graphenea Semiconductors
Graphenea, a technology company founded in 2010, is a world leading graphene producer. The 25 employees in Graphenea work on contributing to the successful development of graphene applications of our customers, in a wide range of sectors and in more than 60 countries in the world. Through research and innovation, we support our customers with our portfolio consisting of: CVD Graphene films, Graphene Field-Effect-Transistors chips (GFETs), Graphene Foundry Services (GFAB) and Graphene Oxides. Graphenea’s facilities are located in Spain (San Sebastián) and USA (Boston).
