Connecting 2D materials innovation for diverse applications
This webinar features leading European projects working on advanced 2D materials (2DM) and their application in the next-generation devices. The event will focus on how materials such as graphene and transition metal dichalcogenides (TMDs) can be engineered to support new applications in electronics, sensing, and device manufacturing. Speakers from NanoIC, FAMES, APECS, and the 2D-PL will present current challenges and recent progress in the integration of TMDs and graphene, covering processes such as growth, characterisation, pulsed laser annealing, and transfer, while preserving their properties for device fabrication. The session will end with a Q&A and panel discussion on future opportunities and challenges in the field of 2D materials.
Speakers
Pierre Morin
2D-PL, imec
Aashi Gupta
NanoIC, Tyndall National Institute
Rajat Gujrat
2D-PL, imec
Stéphane Cadot
FAMES, CEA-Leti
Jérôme Borme
APECS, International Iberian Nanotechnology Laboratory
Aashi Gupta
Aashi Gupta is currently pursuing her PhD (3rd year) in Electronics and Electrical Engineering at Tyndall National Institute, University College Cork. She is working on a Research Ireland Frontiers project about Pulsed Laser annealing of 2D transition metal dichalcogenides (TMDs) for BEOL compatibility. She is also actively involved in the NanoIC Pilot Line module of 2D TMDs at Tyndall, which involves R&D of TMDs for prospective applications in memory devices.
Rajat Gujrat
Rajat Gujrati obtained his PhD from the Georgia Institute of Technology in 2023, where he specialised in the transfer and integration of III–N epilayers for optoelectronic applications. His doctoral research focused on the development of hexagonal boron nitride based transfer processes for the fabrication of freestanding GaN microLEDs. He subsequently continued to develop III–N material transfer technologies as a postdoctoral researcher at CNRS, exploring applications ranging from MEMS to optogenetic implants.
Since 2025, Rajat has been a process engineer at imec. His work focuses on development of transfer module for transition metal dichalcogenides (TMDCs), addressing key challenges related to material integrity and scalability. At imec, he contributes to advancing process modules that enable the integration of emerging materials into future CMOS-compatible platforms.
Stéphane Cadot
Stéphane Cadot is a Research Engineer at CEA-Leti in Grenoble, where he works on advanced thin-film deposition processes by Atomic Layer Deposition (ALD). He graduated in Chemical and Process Engineering from CPE Lyon and obtained a Master’s degree in Catalysis and Physical Chemistry from Université Claude Bernard Lyon 1. He then completed a PhD in Materials Chemistry focused on the ALD growth of MoS₂ thin films and other transition metal dichalcogenides for nanoelectronics applications. His research has contributed to the development of wafer-scale ALD processes for 2D materials, with publications covering MoS₂ synthesis, characterisation, and integration into advanced electronic devices.
Introduction
Challenges of device fabrication and pulsed laser annealing of 2D TMDs
Aashi Gupta, NanoIC, Tyndall National Institute
Abstract: Transition metal dichalcogenides (TMD) thin films have gained significant interest in the recent times due to their tuneable electrical and mechanical properties and have emerged as a promising candidate for micro and nano electronic devices. However, despite the suitable properties, TMD thin films come with its own set of challenges like delamination, growth temperature, formation of low resistance contacts etc. In this talk, we talk about these challenges in a bit more detail and explore plausible solutions for each one these.
During the talk, various steps involved in the device fabrication from TMD thin films would be discussed, along with the optimization of these parameters to ensure minimal film delamination and maximum yield. High device yield is critical to enable learning cycles, systematic scientific studies and process development. There will also be discussion around how metrology techniques like Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM) and Electrical testing play a key role in understanding and improving the quality of the TMDs. Finally, the grand challenge of low temperature growth and formation of low resistance contacts would be addressed by introducing Pulsed Laser Annealing (PLA) as a prospective solution.
2D material transfer: Opportunities and Challenges
Rajat Gujrat, 2D-PL, imec
Abstract: 2D material transfer is the youngest semiconductor fabrication module, holding the promise of bridging material growth on non-Si wafers with device integration on Si wafers—two domains whose best-in-class approaches largely remain mutually exclusive today. Unlike other, more mature semiconductor modules, 2D transfer is still in its early stages of development. While a wide range of transfer technologies has been proposed, achieving high-quality transfer that preserves pristine material integrity while meeting industry-standard requirements for scalability and yield remains a significant challenge, particularly given the ultra-thin and mechanically delicate nature of these materials.
In the context of transition metal dichalcogenides (TMDCs), this presentation traces the evolution and highlights the latest developments in 2D material transfer approaches at imec. It further outlines the key challenges that must be addressed to enable robust, and scalable deployment of 2D materials in future semiconductor technologies.
Atomic layer deposition and wafer-scale characterization of 2D MoS2 layers
Stéphane Cadot, FAMES, CEA-Leti
Abstract: This talk will highlight recent advances at CEA-Leti in the atomic layer deposition (ALD) of 2D MoS₂ thin films for 2D or 3D integration in nanoelectronics devices. It will cover key process developments, challenges associated with hardware compatibility and process reproducibility, as well as wafer-scale characterization strategies for assessing the uniformity and properties of 2D layers.
Growth of single-layer graphene as single crystals and dry transfer into flexible devices
Jérôme Borme, APECS, International Iberian Nanotechnology Laboratory
Abstract: Scalable production of high-quality single-layer graphene is essential for graphene-based electronic and flexible devices. We present an optimised thermal CVD growth approach on copper, combining temperature tuning and pre-oxidation to promote Cu(111) recrystallisation and aligned graphene grain growth. Copper texture evolution was characterised by X-ray diffraction, while graphene transfer was achieved through a dry delamination technique based on galvanic corrosion.
The aligned crystal growth was found to facilitate graphene decoupling from copper, improving transfer efficiency and reducing unintentional doping compared to conventional wet-transfer methods, as confirmed by Raman spectroscopy. The combined growth and transfer strategy enables the fabrication of high-quality graphene films on polymer substrates, supporting applications in flexible electronics and healthcare technologies.
Q&A
Panel Discussion
Host projects
