Pioneering 2D Materials for Semiconductor Industry

Lunch

Keynotes

Peter Bøggild, Technical University of Denmark, Denmark
The 2D materials reproducibility gap: can it be closed?

The last two decades have seen remarkable progress in 2D materials research, yet technological adoption has been slower. One reason may be the difficulty in reproducing published studies, creating a gap between research and technology transfer. This "reproducibility gap" hinders further development, and this talk will examine the causes and offer solutions.

Hyeon-Jin Shin, GIST, South Korea

2D materials design for next-generation electronic devices

As our lifestyle changes, data created exponentially and continuously increases. In order to cope with the enormous amount of data being generated, future electronic devices are considering miniaturising current Si devices for the angstrom era and introducing 3D stacked device architectures and new functional devices. In this talk, I will introduce 2D materials design and integration properties for next-generation logic devices.

2D-EPL project update: from process enablement to integration development for pilot line services

Inge Asselberghs, 2D-EPL Technical Leader, imec

Amaia Zurutuza, Graphenea

Mindaugas Lukosius, IHP

Gordon Rinke, AMO

Miika Soikkeli, VTT

Coffee Break

Innovation Forum

Kari Hjelt, Chalmers Industriteknik, Sweden

Introduction

Sanna Arpiainen, Infineon, Germany 

Industrialization aspects of 2D materials in IDM landscape

Over several decades, silicon platforms have been able to fulfill the increasing demands through new innovations and by merging alternative material solutions with e.g. epitaxial methods. To make 2D materials part of the platform, development of the reliability, integration yield and maturity are essential. This talk will address the requirements and prospects from the point of view of large-scale IDM, with a focus on sensing.

Muralikrishna Sathyamurthy, X-FAB, Germany

Potential and challenges for graphene integration - from the silicon foundry perspective

The talk will focus on capabilities from X-FAB related to Graphene technology and potential business opportunities in the field of sensors and photonics activities. In addition, it will deal will with the challenges related to integration of graphene from a foundry perspective (Monolithic and Heterogenous Integration).  

Harm Knoops, Oxford Instruments, United Kingdom

Low-damage, high-quality dielectrics on 2D materials by plasma ALD

A key challenge in realising 2D materials’ potential in emerging devices is the development of scalable, high-quality integration of dielectric materials as functional layers and encapsulation. We describe a novel method to deposit high-κ dielectrics on 2D materials through an in-situ-prepared protective seed-layer using remote plasma ALD.

Natasha Conway, Paragraf, United Kingdom

Scaling the production of high-quality graphene devices for sensing applications

Paragraf is the first company in the world to mass produce graphene-based electronic devices using standard semiconductor processes. This talk gives an overview of Paragraf's journey, from the growth of graphene to processing into final devices, enabling industry-ready magnetic and molecular sensing products for a range of applications.

Cedric Huyghebaert, Black Semiconductor, Germany

Networking mingle