Published in Nature Communications

Tunable unconventional spin orbit torque magnetization dynamics in van der Waals heterostructures.

Nat Commun 16, 8722 (2025). https://doi.org/10.1038/s41467-025-6410

In conventional spin-orbit torque (SOT) memory devices, by using spin-orbit materials (SOM), in-plane SOT torque components are usually generated, which limits their application in switching a magnet with perpendicular magnetic anisotropy (PMA). Researchers have developed van der Waals (vdW) heterostructures of two-dimensional (2D) SOMs and ferromagnets (FMs) to address the challenges in SOT technologies. However, the SOT switching parameters are two to three orders of magnitude lower than required for energy-efficient switching and most of the experiments were limited to cryogenic temperatures.

Recently researchers from Chalmers University of Technology published their work in Nature Communication to demonstrate unconventional out-of-plane magnetization dynamics using the all-vdW heterostructures of TaIrTe₄/Fe₃GaTe₂ at room temperature. This is critical for understanding the interplay between broken crystal symmetries, unconventional charge-spin conversion (CSC), and SOT-induced magnetization dynamics, ultimately enabling the design of efficient and ultrafast spintronic devices.

Please read more about the work: Tunable unconventional spin orbit torque magnetization dynamics in van der Waals heterostructures | Nature Communications