Researchers from FLAG-ERA’s TAILSPIN project ‘take a dip’ in the quantum world and push ahead with low-power transistors based on semiconducting graphene nanoribbons
Graphene Flagship researchers have devised a wafer-scale fabrication method that paves the way to the next generation of telecom and datacom devices.
Funded by the European Commission, this €20 million project will enable large volume production of electronic devices based on two-dimensional materials.
Graphene Flagship Business Developer for Electronics Applications, Lilei Ye, offers her thoughts on the current state of of graphene in the field
Graphene Flagship partnering project GraNiTe exploited graphene and layered materials to enhance transistors for communications, diagnostics and security
Payper worked with the Graphene Flagship to develop a new contactless payment method using printable circuits
Graphene Flagship Associate Member Nu Quantum promises new quantum devices thanks to 2D and layered materials
The Graphene Flagship speaks to Paolo Perna, leader of the SOgraphMEM consortium, about graphene's role in next-generation computer memory
Paolo Samorì talks about the role graphene and layered materials might play in the computers of the future
Researchers at Graphene Flagship partner the Cambridge Graphene Centre, University of Cambridge, have developed a new type of resistive memory that can be scaled down beyond current limitations.
Interfacing graphene with layers of transition metal dichalcogenides enables electric field-controlled spintronic memory devices.
Measurements show that indium selenide’s band gap inverts when deposited with six or more atomic layers, unlike transition metal dichalcogenides
Removing impurities between layered materials using heat and pressure increases charge carrier mobility and brings scalable methods closer to becoming a reality.
In a review published in Nature, Graphene Flagship researchers at ICFO, Spain and IMEC, Belgium, report on the current state, challenges, and opportunities of graphene and related material integration in silicon technologies.