
Empowering Advanced Electronics with Layered Materials and Wide-Bandgap Semiconductors
The ETMOS project develops diodes and transistors based on MoS2, SiC and GaN
The ETMOS project develops diodes and transistors based on MoS2, SiC and GaN
An interview of Tenutec’s CEO Sebastian Ringqvist about innovative thermal dissipation systems with low footprint
The Polish startup aims to protect electronic devices from interference
This new approach, developed by scientists from the University of Cambridge and RWTH Aachen University, could mark a real breakthrough for the industrialisation of graphene.
Graphene has proven to be a game-changer in the textile industry, that’s why several sports and clothing brands are working with graphene suppliers to produce graphene-enriched fabrics.
Graphene and layered materials put an end to the treasure hunt for rare earths and scarce materials, paving the way to sustainable electronics
MoS2-enabled logic-in-memory devices with the potential to outperform silicon
Graphene Flagship researchers at the Catalan Institute of Nanoscience and Nanotechnology (ICN2), Barcelona, have led the publication of Nature review that roadmaps the possibilities of 2D materials in spin-based memory technologies.
Graphene Flagship researchers from ICFO in Barcelona, in collaboration with teams in Columbia University, US, NTU, Singapore and NIMS, Japan, have reported the first use of light to bend of electrons in bilayer graphene.
Graphene Flagship researchers produced graphene fragments with a diameter smaller than 100 nm – and showed their potential for photodetection.
Ultra-small devices show nano-synaptic responses with low power consumption.
Andreas Isacsson shares the successes of the project, which investigates heat and charge transport in composite materials
Patterning small and sharp geometries for the quantum technologies of the future
Introducing the Graphene Flagship’s new manufacturing facility for graphene-based electronics, optoelectronics and sensors