Graphene can do more than transport spins — it can process them
Graphene Flagship project 2DSPIN-TECH has published a paper demonstrating that 2D materials can go beyond passive spin transport and enable active spintronic functionalities,
Our new paper reports giant spin signals and a spin-diode effect in folded-bilayer graphene at room temperature, reaching spin accumulations >20 meV and millivolt-level signals. By tailoring the graphene channel geometry, we achieve near-ideal impedance matching and unlock nonlinear spin–charge interactions.
These results demonstrate that 2D materials can go beyond passive spin transport and enable active spintronic functionalities, which are essential for future spin-based memory, logic, and neuromorphic computing architectures.
This work was achieved through tight collaboration between academic groups from 2DSPIN-TECH, Chalmers University of Technology, BME Budapest, and the University of Manchester, bridging materials science, device physics, and modelling.
Author bio
2DSPIN-TECH
2DSPIN-TECH is a Horizon Europe research and innovation project within the Graphene Flagship. 2DSPIN-TECH has the ambition to significantly reduce energy consumption, promote sustainability, and improve the overall performance of computer memory. The 2D topological spin-orbit materials can generate a giant current-induced spin polarization, whereas room temperature 2D magnets provide the prospective of electric control of magnetism. 2DSPIN-TECH is coordinated by Prof. Saroj Dash at Chalmers University of Technology.