Spin polarisation has been introduced to graphene without a ferromagnet for the first time.
The Graphene Flagship speaks to Paolo Perna, leader of the SOgraphMEM consortium, about graphene's role in next-generation computer memory
Interfacing graphene with layers of transition metal dichalcogenides enables electric field-controlled spintronic memory devices.
Marc Vila, PhD student at Graphene Flagship partner ICN2 (left), speaks to us about his research in spintronics using graphene
SciTechEuropa talks Spintronics and the Graphene Flagship
Researchers from the Graphene Flagship have predicted and demonstrated a giant spin anisotropy in graphene, paving the way for new spintronic logic devices. This landmark collaborative effort shows the Flagship’s role in rapid progress, from theoretical concept to experimental confirmation.
A layer-by-layer schematic (above) and an optical microscopic picture (below) of a graphene and boron nitride heterostructure device which shows unprecedented spin transport efficiency at room temperature. Credit: M. Gurram, S. Omar and B.J. van Wees, University of Groningen.
Above a schematic of a fabricated graphene-molybdenum disulfide heterostructure spintronic device. Credit: Spin FET@Chalmers
Electronics is based on the manipulation of electrons and other charge carriers, but in addition to charge, electrons possess a property known as spin. When spin is manipulated with magnetic and electric fields, the result is a spin-polarised current that carries more information than is possible with charge alone. Spin-transport electronics, or spintronics, is a subject of active investigation within Europe’s Graphene Flagship.