Spotlight: Developing new memory devices with Marie-Blandine Martin
An interview about the life of a spintronics researcher
News articles
2D materials for a major leap forward in non-volatile memory technologies
Graphene Flagship researchers at the Catalan Institute of Nanoscience and Nanotechnology (ICN2), Barcelona, have led the publication of Nature review that roadmaps the possibilities of 2D materials in spin-based memory technologies.
Hall effect measurements in variable environments
Graphene Flagship parnter NPL just launched a service to measure the electrical transport properties of materials and devices, including sheet resistance, resistivity, carrier type, density, and mobility.
Ultrasharp patterning of layered materials
Patterning small and sharp geometries for the quantum technologies of the future
Graphene spintronics paves way to new computing technologies
Meet the team that explores the frontier of graphene and layered materials for memory, processing and more
Towards ultra-compact spin-logic circuitry with magnetic graphene
Spin polarisation has been introduced to graphene without a ferromagnet for the first time.
Low power electronics with a spin
The Graphene Flagship speaks to Paolo Perna, leader of the SOgraphMEM consortium, about graphene's role in next-generation computer memory
Profile Mar Garcia Hernandez
Mar García-Hernandez of the Spanish National Research Council (CSIC) is the leader of the Graphene Flagship Work Package Enabling Materials, which is focused on development of scalable synthesis methods for graphene and other layered materials.
Layered heterostructures put a spin on magnetic memory devices
Interfacing graphene with layers of transition metal dichalcogenides enables electric field-controlled spintronic memory devices.
Spotlight Marc Vila, ICN2
Marc Vila, PhD student at Graphene Flagship partner ICN2 (left), speaks to us about his research in spintronics using graphene
SciTechEuropa talks Spintronics and the Graphene Flagshipbe
SciTechEuropa talks Spintronics and the Graphene Flagship
Graphene spin transport takes a step forward towards applications
Researchers from the Graphene Flagship have predicted and demonstrated a giant spin anisotropy in graphene, paving the way for new spintronic logic devices. This landmark collaborative effort shows the Flagship’s role in rapid progress, from theoretical concept to experimental confirmation.
Graphene and Boron Nitride Heterostructure Creates Large Spin Signals
A layer-by-layer schematic (above) and an optical microscopic picture (below) of a graphene and boron nitride heterostructure device which shows unprecedented spin transport efficiency at room temperature. Credit: M. Gurram, S. Omar and B.J. van Wees, University of Groningen.
Field effect transistor using graphenes electron spin
Above a schematic of a fabricated graphene-molybdenum disulfide heterostructure spintronic device. Credit: Spin FET@Chalmers